TYPICAL APPLICATIONS (cont.)
BASIC CURRENT SOURCES
N- CHANNEL CURRENT SOURCE
P- CHANNEL CURRENT SOURCE
V+ = +5V
V+ = +5V
ALD1102,
1/2 ALD1107,
I SOURCE
I SET
R SET
8
or ALD1117
7
Q 2 8
5
6
2
3
Q 1
Q 3
3
2
6
5
Q 4
7
1
I SOURCE
ALD1101,
1/2 ALD1106,
or ALD1116
I SET
R SET
V+ - 1.0 ~
I SOURCE = I SET =
V+ - Vt
R SET
= ~
R SET
=
4
R SET
Q 1, Q 2 : N - Channel MOSFET
Q 3 , Q 4 : P - Channel MOSFET
CASCODE CURRENT SOURCES
I SOURCE
Q 4
Q 2
I SET
V+ = +5V
R SET
Q 3
Q 1
Q 1
Q 3
V+ = +5V
2 x ALD1102
or ALD1107
Q 2
Q 4
2 x ALD1101
or ALD1106
I SET
R SET
I SOURCE
I SOURCE = I SET =
V+ - 2Vt
R SET
= ~
3
R SET
Q 1 , Q 2 , Q 3 , Q 4 : N - Channel MOSFET
(ALD1101 or ALD1103)
Q1, Q2, Q3, Q4: P - Channel MOSFET
(ALD1102 or ALD1103)
ALD1106/ALD1116
Advanced Linear Devices
5 of 11
相关PDF资料
ALD111933SAL MOSFET 2N-CH 10.6V 8SOIC
ALD114804APCL MOSFET N-CH 10.6V QUAD 16PDIP
ALD114835PCL MOSFET N-CH 10.6V QUAD 16PDIP
ALD114913SAL MOSFET N-CH 10.6V DUAL 8SOIC
ALNICO500 19X3.2X3.2MM MAGNET 19MM X 3.2 X 3.2
ALS-PD70-01C/TR7 IC IR AMBIENT LIGHT SENSOR
ALS-PDIC15-21C/L230/TR8 IC IR AMBIENT LIGHT SENSOR
ALS-PDIC17-55C/TR8 IC IR AMBIENT LIGHT SENSOR
相关代理商/技术参数
ALD1117 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET
ALD1117DA 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY
ALD1117PA 功能描述:MOSFET Dual P-Channel Array RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1117PAL 功能描述:MOSFET Dual P-Channel Array RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1117SA 功能描述:MOSFET Dual P-Channel Array RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1117SAL 功能描述:MOSFET Dual P-Channel Array RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD111910MAL 功能描述:MOSFET Dual N-Ch FET EPAD Matched Pair Array RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD111910PAL 功能描述:MOSFET Dual N-Ch FET EPAD Matched Pair Array RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube